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? semiconductor components industries, llc, 2015 august, 2015 ? rev. 4 1 publication order number: ncv8715/d ncv8715 50 ma ultra-low iq, wide input voltage, low dropout linear voltage regulator the ncv8715 is 50 ma ldo linear voltage regulator. it is a very stable and accurate device with ultra?low ground current consumption (4.7 a over the full output load range) and a wide input voltage range (up to 24 v). the regulator incorporates several protection features such as thermal shutdown and current limiting. features ? operating input voltage range: 2.5 v to 24 v ? fixed voltage options available: 1.2 v to 5.0 v ? ultra low quiescent current: max. 5.8 a over full load and temperature ? 2% accuracy over full load, line and temperature variations ? psrr: 52 db at 100 khz ? noise: 190 v rms from 200 hz to 100 khz ? thermal shutdown and current limit protection ? available in xdfn6 1.5 x 1.5 mm and sc?70 (sc?88a) package ? these are pb?free devices typical applications ? infotainment, audio ? communication systems ? safety systems figure 1. typical application schematic ncv8715 nc in out nc gnd 1.2 v < v out < 5 v 2.5 v < v out < 24 v 1 f ceramic 1 f ceramic xdfn6 case 711ae marking diagrams www. onsemi.com see detailed ordering, marking and shipping information on page 18 of this data sheet. ordering information xxx = specific device code m = date code = pb?free package xxxm 1 sc?70?5 (sc?88a) case 419a xxx m (note: microdot may be in either location)
ncv8715 www. onsemi.com 2 in out mosfet driver with current limit thermal shutdown eeprom uvlo gnd bandgap reference figure 2. simplified block diagram figure 3. pin description pin function description pin no. pin name description sc?70 xdfn6 5 6 out regulated output voltage pin. a small 0.47 f ceramic capacitor is needed from this pin to ground to assure stability. 1 2 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. 2 3 gnd power supply ground. 3 4 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. ? 5 n/c no connection. this pin can be tied to ground to improve thermal dissipation or left disconnected. 4 1 in input pin. a small capacitor is needed from this pin to ground to assure stability.
ncv8715 www. onsemi.com 3 absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 to 24 v output voltage v out ?0.3 to 5 v output short circuit duration t sc indefinite s maximum junction temperature t j(max) 125 c storage temperature t stg ?55 to 150 c moisture sensitivity level msl msl1 ? esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec?q100?002 (eia/jesd22?a114) esd machine model tested per aec?q100?003 (eia/jesd22?a115) latch up current maximum rating tested per jedec standard: jesd78. thermal characteristics rating symbol value unit thermal characteristics, sc?70 (note 3) thermal resistance, junction?to?air (note 4) r ja 390 c/w thermal characteristics, xdfn6 (note 3) thermal resistance, junction?to?air (note 4) r ja 260 c/w 3. refer to electrical characteristics and application information for safe operating area. 4. as measured using a copper heat spreading area of 650 mm 2 , 1 oz copper thickness.
ncv8715 www. onsemi.com 4 electrical characteristics ? voltage version 1.2 v ?40 c t j 125 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 7) parameter test conditions symbol min typ max unit operating input voltage i out 10 ma v in 2.5 24 v 10 ma< i out < 50 ma 3.0 24 output voltage accuracy 3.0 v < v in < 24 v, 0 ma < i out < 50 ma v out 1.164 1.2 1.236 v line regulation 2.5 v v in 24 v, i out = 1 ma reg line 2 10 mv load regulation i out = 0 ma to 50 ma reg load 5 10 mv dropout voltage (note 5) v do ? mv maximum output current (note 8) i out 100 200 ma 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 power supply rejection ratio v in = 3.0 v, v out = 1.2 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 60 db output noise voltage v out = 1.2 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 65 v rms thermal shutdown temperature (note 6) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 6) temperature falling from t sd t sdh ? 15 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. not characterized at v in = 3.0 v, v out = 1.2 v, i out = 50 ma. 6. guaranteed by design and characterization. 7. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 8. respect soa.
ncv8715 www. onsemi.com 5 electrical characteristics ? voltage version 1.5 v ?40 c t j 125 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 11) parameter test conditions symbol min typ max unit operating input voltage i out 10 ma v in 2.5 24 v 10 ma < i out < 50 ma 3.0 24 output voltage accuracy 3.0 v < v in < 24 v, 0 < i out < 50 ma v out 1.455 1.5 1.545 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 2 10 mv load regulation i out = 0 ma to 50 ma reg load 5 10 mv dropout voltage (note 9) v do ? mv maximum output current (note 12) i out 100 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.0 v, v out = 1.5 v v pp = 200 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 56 db output noise voltage v out = 1.5 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 75 v rms thermal shutdown temperature (note 10) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 10) temperature falling from t sd t sdh ? 15 ? c 9. not characterized at v in = 3.0 v, v out = 1.5 v, i out = 50 ma. 10. guaranteed by design and characterization. 11. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 12. respect soa.
ncv8715 www. onsemi.com 6 electrical characteristics ? voltage version 1.8 v ?40 c t j 125 c; v in = 2.8v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 15) parameter test conditions symbol min typ max unit operating input voltage i out 10 ma v in 2.8 24 v 10 ma < i out < 50 ma 3.0 24 output voltage accuracy 3.0 v < v in < 24 v, 0 < i out < 10 ma v out 1.746 1.8 1.854 v line regulation 3 v v in 24 v, i out = 1 ma reg line 2 10 mv load regulation i out = 0 ma to 50 ma reg load 5 10 mv dropout voltage (note 13) v do mv maximum output current (note 16) i out 100 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.0 v, v out = 1.8 v v pp = 200 mv modulation i out = 1 ma, c out =10 f f = 100 khz psrr 60 db output noise voltage v out = 1.8 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 95 v rms thermal shutdown temperature (note 14) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 14) temperature falling from t sd t sdh ? 15 ? c 13. not characterized at v in = 3.0 v, v out = 1.8 v, i out = 50 ma 14. guaranteed by design and characterization. 15. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 16. respect soa.
ncv8715 www. onsemi.com 7 electrical characteristics ? voltage version 2.5 v ?40 c t j 125 c; v in = 3.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 19) parameter test conditions symbol min typ max unit operating input voltage 0 < i out < 50 ma v in 3.5 24 v output voltage accuracy 3.5 v < v in < 24 v, 0 < i out < 50 ma v out 2.45 2.5 2.55 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 3 10 mv load regulation i out = 0 ma to 50 ma reg load 10 15 mv dropout voltage (note 17) v do = v in ? (v out(nom) ? 125 mv) i out = 50 ma v do 260 450 mv maximum output current (note 20) i out 100 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 3.5 v, v out = 2.5 v v pp = 200 mv modulation i out = 1 ma, c out =10 f f = 100 khz psrr 60 db output noise voltage v out = 2.5 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 115 v rms thermal shutdown temperature (note 18) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 18) temperature falling from t sd t sdh ? 15 ? c 17. characterized when v out falls 125 mv below the regulated voltage and only for devices with v out = 2.5 v. 18. guaranteed by design and characterization. 19. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 20. respect soa.
ncv8715 www. onsemi.com 8 electrical characteristics ? voltage version 3.0 v ?40 c t j 125 c; v in = 4.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 23) parameter test conditions symbol min typ max unit operating input voltage 0 < i out < 50 ma v in 4.0 24 v output voltage accuracy 4.0 v < v in < 24 v, 0< i out < 50 ma v out 2.94 3.0 3.06 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 3 10 mv load regulation i out = 0 ma to 50 ma reg load 10 15 mv dropout voltage (note 21) v do = v in ? (v out(nom) ? 150 mv) i out = 50 ma v do 250 400 mv maximum output current (note 24) i out 100 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 4.0 v, v out = 3.0 v v pp = 100 mv modulation i out = 1 ma, c out = 10 f f = 100 khz psrr 60 db output noise voltage v out = 3 v, i out = 50 ma, f = 200 hz to 100 khz, c out = 10 f v n 135 v rms thermal shutdown temperature (note 22) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 22) temperature falling from t sd t sdh - 25 - c 21. characterized when v out falls 150 mv below the regulated voltage and only for devices with v out = 3.0 v 22. guaranteed by design and characterization. 23. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. respect soa
ncv8715 www. onsemi.com 9 electrical characteristics ? voltage version 3.3 v ?40 c t j 125 c; v in = 4.3 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t j = +25 c. (note 27) parameter test conditions symbol min typ max unit operating input voltage 0 < i out < 50 ma v in 4.3 24 v output voltage accuracy 4.3 v < v in < 24 v, 0 < i out < 50 ma v out 3.234 3.3 3.366 v line regulation v out + 1 v v in 24 v, i out = 1 ma reg line 3 10 mv load regulation i out = 0 ma to 50 ma reg load 10 15 mv dropout voltage (note 25) v do = v in ? (v out(nom) ? 165 mv) i out = 50 ma v do 230 350 mv maximum output current (note 28) i out 100 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 4.3 v, v out = 3.3 v v pp = 200 mv modulation i out = 1 ma, c out =10 f f = 100 khz psrr 60 db output noise voltage v out = 4.3 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 140 v rms thermal shutdown temperature (note 26) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 26) temperature falling from t sd t sdh ? 15 ? c 25. characterized when v out falls 165 mv below the regulated voltage and only for devices with v out = 3.3 v. 26. guaranteed by design and characterization. 27. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 28. respect soa.
ncv8715 www. onsemi.com 10 electrical characteristics ? voltage version 5.0 v ?40 c t j 125 c; v in = 6.0 v; i out = 1 ma, c in = c out = 1 f, unless otherwise noted. typical values are at t j = +25 c. (note 31) parameter test conditions symbol min typ max unit operating input voltage 0 < i out < 50 ma v in 6.0 24 v output voltage accuracy 6.0v < v in < 24v, 0< i out < 50 ma v out 4.9 5.0 5.1 v line regulation v out + 1 v v in 24 v, iout = 1ma reg line 3 10 mv load regulation i out = 0 ma to 50 ma reg load 10 15 mv dropout voltage (note 29) v do = v in ? (v out(nom) ? 250 mv) i out = 50 ma v do 230 350 mv maximum output current (note 32) i out 90 200 ma ground current 0 < i out < 50 ma, v in = 24 v i gnd 3.4 5.8 a power supply rejection ratio v in = 6.0 v, v out = 5.0 v v pp = 200 mv modulation i out = 1 ma, c out =10 f f = 100 khz psrr 56 db output noise voltage v out = 5.0 v, i out = 50 ma f = 200 hz to 100 khz, c out = 10 f v n 190 v rms thermal shutdown temperature (note 30) temperature increasing from t j = +25 c t sd 170 c thermal shutdown hysteresis (note 30) temperature falling from t sd t sdh ? 15 ? c 29. characterized when v out falls 250 mv below the regulated voltage and only for devices with v out = 5.0 v. 30. guaranteed by design and characterization. 31. performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 32. respect soa.
ncv8715 www. onsemi.com 11 2.472 2.476 2.480 2.484 2.488 2.492 2.496 2.500 2.504 0 1020304050 1.172 1.176 1.180 1.184 1.188 1.192 1.196 1.200 1.204 0 1020304050 v in = 3.5 v v in = 5.0 v v in = 10 v v in = 15 v v in = 20 v v in = 24 v 4.98 4.985 4.99 4.995 5 5.005 5.01 5.015 5.02 ?40 ?20 0 20 40 60 80 100 120 figure 4. output voltage vs. temperature figure 5. output voltage vs. temperature figure 6. output voltage vs. temperature figure 7. output voltage vs. temperature figure 8. output voltage vs. output current figure 9. output voltage vs. output current 1.2 ?40 ?20 0 120 100 20 40 60 80 temperature ( c) output voltage (v) v in = 3.0 v ncv8715x12xxx c in = c out = 1 f i out = 1 ma temperature ( c) output voltage (v) 2.506 ?40 ?20 0 120 100 20 40 60 80 3.318 ?40 ?20 0 120 100 20 40 60 80 temperature ( c) output voltage (v) junction temperature ( c) output voltage (v) output current (ma) output voltage (v) output current (ma) output voltage (v) v in = (5.0 ? 24.0) v 1.199 1.198 1.197 1.196 1.195 1.194 1.193 1.192 v in = 3.0 v v in = (5.0 ? 24.0) v 2.504 2.502 2.5 2.498 2.496 2.494 2.492 2.49 ncv8715x25xxx c in = c out = 1 f i out = 1 ma 3.315 3.312 3.309 3.306 3.303 3.3 3.297 3.294 ncv8715x33xxx c in = c out = 1 f i out = 1 ma v in = 4.3 v to 24 v ncv8715x50xxx c in = c out = 1 f i out = 1 ma v in = 6.0 v v in = (8.0 ? 24.0) v ncv8715x12xxx c in = c out = 1 f t a = 25 c v in = 3.0 v v in = 5.0 v v in = 10 v v in = 15 v v in = 20 v v in = 24 v ncv8715x25xxx c in = c out = 1 f t a = 25 c
ncv8715 www. onsemi.com 12 4.952 4.960 4.968 4.976 4.984 4.992 5.000 5.008 5.016 0 1020304050 figure 10. output voltage vs. output current figure 11. output voltage vs. output current output current (ma) output voltage (v) output current (ma) output voltage (v) 3.280 3.284 3.288 3.292 3.296 3.300 3.304 3.308 3.312 0 1020304050 v in = 4.3 v v in = 15 v v in = 20 v v in = 24 v ncv8715x33xxx c in = c out = 1 f t a = 25 c v in = 10 v v in = 6.0 v v in = 15 v v in = 20 v v in = 24 v v in = 10 v ncv8715x50xxx c in = c out = 1 f t a = 25 c 0 50 100 150 200 250 300 350 400 0 1020304050 figure 12. dropout voltage vs. output current output current (ma) dropout voltage (mv) t a = 125 c t a = 25 c t a = ?40 c ncv8715x25xxx c in = c out = 1 f 0 50 100 150 200 250 300 350 400 0 1020304050 figure 13. dropout voltage vs. output current output current (ma) dropout voltage (mv) ncv8715x33xxx c in = c out = 1 f t a = 125 c t a = 25 c t a = ?40 c 0 50 100 150 200 250 300 350 400 0 1020304050 figure 14. dropout voltage vs. output current output current (ma) dropout voltage (mv) t a = 125 c t a = 25 c t a = ?40 c ncv8715x50xxx c in = c out = 1 f 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 i out = 0 i out = 50 ma figure 15. ground current vs. input voltage input voltage (v) gnd, quiescent current a) ncv8715x12xxx c in = c out = 1 f t a = 25 c
ncv8715 www. onsemi.com 13 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 figure 16. ground current vs. input voltage figure 17. ground current vs. input voltage input voltage (v) gnd, quiescent current a) input voltage (v) gnd, quiescent current a) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 i out = 0 i out = 50 ma ncv8715x25xxx c in = c out = 1 f t a = 25 c i out = 0 i out = 50 ma ncv8715x33xxx c in = c out = 1 f t a = 25 c 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 figure 18. ground current vs. input voltage input voltage (v) gnd, quiescent current a) i out = 0 i out = 50 ma ncv8715x50xxx c in = c out = 1 f t a = 25 c 2.5 2.8 3.0 3.3 3.5 3.8 4.0 4.3 4.5 ?40 ?20 0 20 40 60 80 100 120 figure 19. quiescent current vs. temperature temperature ( c) quiescent current a) v in = 3 v v in = 24 v ncv8715x12xxx c in = c out = 1 f i out = 0 v in = 10 v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 figure 20. quiescent current vs. temperature temperature ( c) quiescent current a) ?40 ?20 0 20 40 60 80 100 120 v in = 3.5 v v in = 24 v ncv8715x25xxx c in = c out = 1 f i out = 0 v in = 10 v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 figure 21. quiescent current vs. temperature temperature ( c) quiescent current a) ?40 ?20 0 20 40 60 80 100 120 v in = 4.3 v v in = 24 v ncv8715x33xxx c in = c out = 1 f i out = 0 v in = 10 v
ncv8715 www. onsemi.com 14 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 figure 22. quiescent current vs. temperature temperature ( c) quiescent current a) ?40 ?20 0 20 40 60 80 100 120 v in = 6 v v in = 24 v ncv8715x50xxx c in = c out = 1 f i out = 0 v in = 10 v figure 23. psrr vs. frequency frequency (khz) psrr (db) 0 20 40 60 80 100 0.1 1 10 100 1000 ncv8715x12xxx c out = 10 f v in = 3.0 v + 200 mv pp modulation t a = 25 c i out = 1 ma i out = 10 ma i out = 50 ma 0 20 40 60 80 100 0.1 1 10 100 1000 figure 24. psrr vs. frequency frequency (khz) psrr (db) i out = 1 ma i out = 10 ma i out = 50 ma ncv8715x25xxx c out = 10 f v in = 3.5 v + 200 mv pp modulation t a = 25 c 0 20 40 60 80 100 0.1 1 10 100 1000 psrr (db) figure 25. psrr vs. frequency frequency (khz) i out = 1 ma i out = 10 ma i out = 50 ma ncv8715x33xxx c out = 10 f v in = 4.3 v + 200 mv pp modulation t a = 25 c 0 20 40 60 80 100 0.1 1 10 100 1000 figure 26. psrr vs. frequency frequency (khz) psrr (db) ncv8715x50xxx c out = 10 f v in = 6.0 v + 200 mv pp modulation t a = 25 c i out = 1 ma i out = 10 ma i out = 50 ma 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 1000 output voltage noise ( v/ hz ) figure 27. output spectral noise density vs. frequency frequency (khz) c out = 10 f, 65.1 vrms @ 200 hz ? 100 khz c out = 2.2 f, 111.5 vrms @ 200 hz ? 100 khz c out = 1.0 f, 172.1 vrms @ 200 hz ? 100 khz c out = 0.47 f, 208 vrms @ 200 hz ? 100 khz c out = 4.7 f, 80.5 vrms @ 200 hz ? 100 khz ncv8715x12xxx i out = 50 ma t a = 25 c v in = 3 v
ncv8715 www. onsemi.com 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.1 1 10 100 1000 output voltage noise ( v/ hz ) figure 28. output spectral noise density vs. frequency frequency (khz) c out = 10 f, 114.7 vrms @ 200 hz ? 100 khz c out = 2.2 f, 152.2 vrms @ 200 hz ? 100 khz c out = 1.0 f, 172.1 vrms @ 200 hz ? 100 khz c out = 0.47 f, 203.6 vrms @ 200 hz ? 100 khz c out = 4.7 f, 128.4 vrms @ 200 hz ? 100 khz ncv8715x25xxx i out = 50 ma t a = 25 c v in = 3.5 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0.1 1 10 100 1000 output voltage noise ( v/ hz ) figure 29. output spectral noise density vs. frequency frequency (khz) c out = 10 f, 137.1 vrms @ 200 hz ? 100 khz c out = 2.2 f, 170.6 vrms @ 200 hz ? 100 khz c out = 1.0 f, 220.8 vrms @ 200 hz ? 100 khz c out = 0.47 f, 271.1 vrms @ 200 hz ? 100 khz c out = 4.7 f, 145.7 vrms @ 200 hz ? 100 khz ncv8715x33xxx i out = 50 ma t a = 25 c v in = 4.3 v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.01 0.1 1 10 100 1000 output voltage noise ( v/ hz ) figure 30. output spectral noise density vs. frequency frequency (khz) c out = 10 f, 186.1 vrms @ 200 hz ? 100 khz c out = 2.2 f, 207.6 vrms @ 200 hz ? 100 khz c out = 1.0 f, 244.5 vrms @ 200 hz ? 100 khz c out = 0.47 f, 305.0 vrms @ 200 hz ? 100 khz c out = 4.7 f, 189.41 vrms @ 200 hz ? 100 khz ncv8715x50xxx i out = 50 ma t a = 25 c v in = 6.0 v figure 31. line transient response figure 32. line transient response figure 33. line transient response
ncv8715 www. onsemi.com 16 figure 34. load transient response figure 35. load transient response figure 36. load transient response
ncv8715 www. onsemi.com 17 applications information the ncv8715 is the member of new family of w ide input voltage range low dropout regulators which delivers ultra low ground current consumption, good noise and power supply rejection ratio performance. input decoupling (c in ) it is recommended to connect at least 0.1 f ceramic x5r or x7r capacitor between in and gnd pin of the device. this capacitor will provide a low impedance path for any unwanted ac signals or noise superimposed onto constant input voltage. the good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. higher capacitance and lower esr capacitors will improve the overall line transient response. output decoupling (c out ) the ncv8715 does not require a minimum equivalent series resistance (esr) for the output capacitor. the device is designed to be stable with standard ceramics capacitors with values of 0.47 f or greater up to 10 f. the x5r and x7r types have the lowest capacitance variations over temperature thus they are recommended. power dissipation and heat sinking the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncv8715 can handle is given by: p d(max) t j(max) t a r ja (eq. 1) the power dissipated by the ncv8715 for given application conditions can be calculated from the following equations: p d v in i gnd i out i out v in v out (eq. 2) or v in(max) p d(max) v out
i out i out i gnd (eq. 3) hints v in and gnd printed circuit board traces should be as wide as possible. when the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. place external components, especially the output capacitor, as close as possible to the ncv8715, and make traces as short as possible .
ncv8715 www. onsemi.com 18 ordering information device nominal output voltage marking package shipping ? ncv8715sq12t2g 1.2 v v5a sc?88a/sc?70 (pb?free)* 3000 / tape & reel ncv8715sq15t2g 1.5 v v5c ncv8715sq18t2g 1.8 v v5d ncv8715sq25t2g 2.5 v v5e ncv8715sq30t2g 3.0 v v5f ncv8715sq33t2g 3.3 v v5g ncv8715sq50t2g 5.0 v v5h ncv8715mx12tbg 1.2 v va xdfn6 (pb?free)* ncv8715mx15tbg 1.5 v vc ncv8715mx18tbg 1.8 v ve NCV8715MX25TBG 2.5 v ve ncv8715mx30tbg 3.0 v vf ncv8715mx33tbg 3.3 v vg ncv8715mx50tbg 5.0 v vh ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and m ounting techniques reference manual, solderrm/d.
ncv8715 www. onsemi.com 19 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.10 and 0.20mm from terminal tip. c a seating plane d e 0.10 c a3 a1 2x 2x 0.10 c xdfn6 1.5x1.5, 0.5p case 711ae issue a dim a min max millimeters 0.35 0.45 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d e e l pin one reference 0.05 c 0.05 c a 0.10 c note 3 l2 e b b 3 6 6x 1 4 0.05 c mounting footprint* l1 1.50 bsc 1.50 bsc 0.50 bsc 0.40 0.60 --- 0.15 bottom view l 5x dimensions: millimeters 0.73 6x 0.35 5x 1.80 0.50 pitch *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. l1 detail a l alternate terminal constructions l2 0.50 0.70 top view b side view recommended 0.83 a
ncv8715 www. onsemi.com 20 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc?88a (sc?70?5/sot?353) case 419a?02 issue l mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 solder footprint* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8715/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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